TK65S04K3L(T6L1,NQ
MOSFET N-CH 40V 65A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK65S04K3L-T6L1-NQ, an N-Channel MOSFET from their U-MOSIV series. This surface mount component, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, offers a Drain to Source Voltage (Vdss) of 40V. It features a continuous drain current capability of 65A (Ta) at 25°C, with a maximum power dissipation of 88W (Tc). The Rds On is specified at a maximum of 4.5mOhm at 32.5A and 10V Vgs. Key electrical parameters include a Gate Charge (Qg) of 63 nC at 10V and Input Capacitance (Ciss) of 2800 pF at 10V. The device operates across an extended temperature range up to 175°C (TJ). This MOSFET is suitable for applications in the automotive and industrial sectors requiring high-efficiency power switching.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |