TK65G10N1,RQ
MOSFET N-CH 100V 65A D2PAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK65G10N1-RQ is an N-Channel MOSFET from the U-MOSVIII-H series. This surface mount device offers a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 65A at 25°C. It features a low on-resistance of 4.5mOhm at 32.5A and 10V gate drive. The device is specified with a maximum junction temperature of 150°C and a power dissipation of 156W at case temperature. Key parameters include a gate charge (Qg) of 81 nC at 10V and input capacitance (Ciss) of 5400 pF at 50V. The package is a TO-263-3, D2PAK, supplied on tape and reel for automated assembly. This component is suitable for applications in switching power supplies and industrial motor control.
Additional Information
Series: U-MOSVIII-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V |
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