TK60S06K3L(T6L1,NQ
MOSFET N-CH 60V 60A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Toshiba Semiconductor and Storage TK60S06K3L-T6L1-NQ is an N-Channel U-MOSIV series MOSFET designed for high-efficiency power applications. This device features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 60A at 25°C (Ta), with a maximum power dissipation of 88W (Tc). The on-resistance (Rds On) is a low 8mOhm at 30A and 10V Vgs. Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 2900 pF at 10V Vds. Designed for surface mounting, it utilizes the TO-252-3, DPAK (2 Leads + Tab), SC-63 package (also referred to as DPAK+). The operating temperature range extends to 175°C (TJ). This component is suitable for demanding applications across various industries including automotive and industrial power management.
Additional Information
Series: U-MOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
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