TK60P03M1,RQ(S
MOSFET N-CH 30V 60A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TK60P03M1-RQ-S is an N-channel power MOSFET from the U-MOSVI-H series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 60A at 25°C (Ta), with a maximum power dissipation of 63W (Tc). The device exhibits a low on-resistance of 6.4mOhm at 30A and 10V (Vgs), achieved with a 4.5V to 10V drive voltage range. Key electrical parameters include a gate charge (Qg) of 40 nC (max) at 10V (Vgs) and an input capacitance (Ciss) of 2700 pF (max) at 10V (Vds). Operating at junction temperatures up to 150°C, the TK60P03M1-RQ-S is housed in a TO-252-3, DPAK (SC-63) package, suitable for surface mounting. This MOSFET is commonly utilized in power management applications across various industries, including automotive and industrial power systems. The device is supplied in tape and reel packaging.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 10 V |