TK60E08K3,S1X(S
MOSFET N-CH 75V 60A TO220-3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK60E08K3-S1X-S is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 60A at 25°C. With a low on-resistance of 9mOhm at 30A and 10V, it offers efficient power handling capabilities, dissipating up to 128W. The device is housed in a standard TO-220-3 through-hole package, facilitating ease of integration into existing board designs. Its typical applications include power supply units, motor control, and general-purpose power switching in industrial and automotive sectors. The Gate Charge (Qg) is specified at 75 nC maximum at 10V.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |