TK60D08J1(Q)
MOSFET N-CH 75V 60A TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK60D08J1-Q-, an N-Channel Power MOSFET, offers a 75V drain-to-source voltage and a continuous drain current of 60A at 25°C. This device features a low on-resistance of 7.8mOhm maximum at 30A and 10V Vgs. With a maximum power dissipation of 140W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge of 86 nC maximum at 10V and input capacitance of 5450 pF maximum at 10V. The TK60D08J1-Q- utilizes a TO-220(W) through-hole package, operating at junction temperatures up to 150°C. This component is commonly found in power supply units and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | TO-220(W) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 10 V |
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