TK560P65Y,RQ
MOSFET N-CHANNEL 650V 7A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSV series N-Channel Power MOSFET, part number TK560P65Y-RQ. This surface-mount device features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C (Tc). The Rds On is specified at a maximum of 560mOhm at 3.5A and 10V Vgs, with a typical gate charge of 14.5 nC at 10V. Input capacitance (Ciss) is a maximum of 380 pF at 300V. The device is rated for 60W power dissipation at 25°C (Tc) and operates at temperatures up to 150°C (TJ). It is supplied in a TO-252-3, DPAK package, commonly used in power supply units, lighting, and industrial motor control applications. The TK560P65Y-RQ is delivered on tape and reel.
Additional Information
Series: DTMOSVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V |
Request a Quote
Clients Also Buy
TK380P65Y,RQ
MOSFET N-CHANNEL 650V 9.7A DPAK
TK560P60Y,RQ
MOSFET N-CHANNEL 600V 7A DPAK
TK380P60Y,RQ
MOSFET N-CHANNEL 600V 9.7A DPAK
