TK560A60Y,S4X
MOSFET N-CH 600V 7A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSV series N-Channel Power MOSFET, part number TK560A60Y-S4X. This device features a drain-source voltage rating of 600 V and a continuous drain current of 7 A at 25°C (Tc). With a maximum power dissipation of 30 W and an Rds(on) of 560 mOhm at 3.5 A and 10 V, it is suitable for demanding applications. The TK560A60Y-S4X utilizes through-hole mounting in a TO-220SIS package. Key electrical parameters include a gate charge of 14.5 nC at 10 V and an input capacitance of 380 pF at 300 V. This component is found in power supply, motor control, and industrial automation applications operating up to 150°C (TJ).
Additional Information
Series: DTMOSVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V |
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