TK55D10J1(Q)
MOSFET N-CH 100V 55A TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK55D10J1-Q- is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100 V. This component features a continuous drain current (Id) capability of 55A at 25°C and a maximum power dissipation of 140W (Tc). The Rds On is specified at a maximum of 10.5mOhm at 27A and 10V Vgs. Gate charge (Qg) is 110 nC maximum at 10V Vgs, with input capacitance (Ciss) at 5700 pF maximum at 10V Vds. The device operates with a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 2.3V maximum at 1mA. This MOSFET is housed in a TO-220(W) through-hole package, suitable for applications in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | TO-220(W) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 10 V |
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