TK50P04M1(T6RSS-Q)
MOSFET N-CH 40V 50A DPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK50P04M1-T6RSS-Q-, an N-Channel Power MOSFET from the U-MOSVI-H series. This component features a 40 V drain-source voltage and a continuous drain current of 50 A at 25°C, with a maximum power dissipation of 60 W at the case temperature. The low on-resistance of 8.7 mOhm at 25 A and 10 V gate drive is achieved through advanced trench technology. Key parameters include a gate charge of 38 nC at 10 V and input capacitance of 2600 pF at 10 V. The device is housed in a TO-252-3, DPAK package for surface mounting and operates efficiently within a temperature range of 150°C. This MOSFET is suitable for applications in power management, automotive systems, and industrial equipment.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V |
Request a Quote
Clients Also Buy
TK50P03M1(T6RSS-Q)
MOSFET N-CH 30V 50A DP
TPCC8005-H(TE12LQM
MOSFET N-CH 30V 26A 8TSON
TPCC8006-H(TE12LQM
MOSFET N-CH 30V 22A 8TSON
