TK50P03M1(T6RSS-Q)
MOSFET N-CH 30V 50A DPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK50P03M1-T6RSS-Q- is a 30V N-Channel MOSFET from the U-MOSVI-H series. This surface mount device, packaged in a TO-252-3, DPAK, offers a continuous drain current of 50A at 25°C and a maximum power dissipation of 47W at 25°C. Key parameters include a low Rds On of 7.5mOhm at 25A, 10V, and a gate charge of 25.3 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power management, automotive, and industrial sectors requiring efficient switching and high current handling.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 10 V |
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