TK50E08K3,S1X(S
MOSFET N-CH 75V 50A TO220-3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK50E08K3-S1X-S is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 75 V drain-source voltage (Vdss) and a continuous drain current (Id) of 50 A at 25°C (Tc). The low on-resistance (Rds On) of 12 mOhm at 25 A and 10 V gate-source voltage ensures minimal conduction losses. With a gate charge (Qg) of 55 nC at 10 V, it facilitates efficient switching performance. The device is packaged in a standard TO-220-3 through-hole configuration, suitable for robust thermal management in demanding environments. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and power management systems where high current handling and low on-state resistance are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |