TK50E06K3A,S1X(S
MOSFET N-CH 60V 50A TO220-3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK50E06K3A-S1X-S is a high-performance N-Channel MOSFET designed for demanding applications. Featuring a 60V drain-source voltage (Vdss) and 50A continuous drain current (Id) at 25°C, this component utilizes Toshiba's advanced U-MOSIV technology for optimized on-resistance and switching characteristics. The Rds (On) is rated at a maximum of 8.5mOhm at 25A and 10V, ensuring efficient power delivery. The device is housed in a standard TO-220-3 package, facilitating through-hole mounting. With a gate charge (Qg) of 54nC at 10V, the TK50E06K3A-S1X-S is suitable for power management circuits in automotive and industrial sectors.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |