TK4A60DB(STA4,Q,M)
MOSFET N-CH 600V 3.7A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK4A60DB-STA4-Q-M-, an N-Channel MOSFET from the À-MOSVII series. This component features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 3.7 A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 2 Ohms at 1.9 A and 10 V gate-source voltage. With a maximum power dissipation of 35 W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 11 nC at 10 V and an input capacitance (Ciss) of 540 pF at 25 V. The TK4A60DB-STA4-Q-M- utilizes Metal Oxide technology and is housed in a TO-220SIS package with a through-hole mounting type. This component is typically employed in power supply units and general-purpose switching applications.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |