TK4A60D(STA4,Q,M)
MOSFET N-CH 600V 4A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK4A60D-STA4-Q-M- is an N-Channel power MOSFET from the $\mu$MOSVII series. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Ta). The Rds(on) is specified at a maximum of 1.7$\Omega$ at 2A and 10V gate-source voltage. With a maximum power dissipation of 35W (Tc), this device is housed in a TO-220SIS package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 12 nC and input capacitance (Ciss) of 600 pF at their respective test conditions. This MOSFET is utilized in applications requiring high voltage switching and power conversion, commonly found in power supplies and industrial automation systems.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
Request a Quote
Clients Also Buy
TK2Q60D(Q)
MOSFET N-CH 600V 2A PW-MOLD2
TK6P53D(T6RSS-Q)
MOSFET N-CH 525V 6A DPAK
TK7P50D(T6RSS-Q)
MOSFET N-CH 500V 7A DPAK
