TK4A50D(STA4,Q,M)
MOSFET N-CH 500V 4A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK4A50D-STA4-Q-M- is a 500V N-Channel MOSFET from the À-MOSVII series. This through-hole component, housed in a TO-220SIS package, offers a continuous drain current of 4A (Ta) and a maximum power dissipation of 30W (Tc). Key electrical characteristics include a drain-to-source voltage of 500V, a maximum Rds(on) of 2Ohm at 2A, 10V, and input capacitance (Ciss) of 380pF at 25V. The gate charge (Qg) is a maximum of 9nC at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 4.4V at 1mA. This device is suitable for applications requiring high voltage switching, often found in power supply units and industrial automation.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
Request a Quote
Clients Also Buy
TK2Q60D(Q)
MOSFET N-CH 600V 2A PW-MOLD2
TK6P53D(T6RSS-Q)
MOSFET N-CH 525V 6A DPAK
TK7P50D(T6RSS-Q)
MOSFET N-CH 500V 7A DPAK
