TK49N65W5,S1F
X35 PB-F POWER MOSFET TRANSISTORManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 49.2A (Ta) 400W (Tc) Through Hole TO-247
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 24.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 300 V |
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