TK45P03M1,RQ(S
MOSFET N-CH 30V 45A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK45P03M1-RQ-S is an N-Channel Power MOSFET from the U-MOSVI-H series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C (Ta). The low on-resistance is specified as 9.7mOhm maximum at 22.5A, 10V, with gate drive voltages ranging from 4.5V to 10V. The device offers a gate charge (Qg) of 25 nC maximum at 10V and an input capacitance (Ciss) of 1500 pF maximum at 10V. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is suitable for power management applications in various industries including automotive and industrial power systems.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 10 V |