TK40S10K3Z(T6L1,NQ
MOSFET N-CH 100V 40A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK40S10K3Z-T6L1-NQ is a N-Channel MOSFET from the U-MOSIV series. This component features a Drain-Source Voltage (Vdss) of 100 V and a Continuous Drain Current (Id) of 40A (Ta) at 25°C. The Rds On is specified at a maximum of 18mOhm at 20A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 61 nC @ 10 V and an Input Capacitance (Ciss) of 3110 pF @ 10 V. With a maximum junction temperature of 175°C and a power dissipation of 93W (Tc), this device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package suitable for surface mounting. This component is utilized in applications such as power supply units, motor control, and automotive systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 10 V |