TK40P04M1(T6RSS-Q)
MOSFET N-CH 40V 40A DPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK40P04M1-T6RSS-Q-, an N-channel Power MOSFET from the U-MOSVI-H series. This surface mount device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 40A at 25°C (Ta). The DPAK package (TO-252-3, DPAK) offers a maximum power dissipation of 47W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 11mOhm at 20A and 10V, and a gate charge (Qg) of 29nC at 10V. Gate drive voltage ranges from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.3V at 200µA. Input capacitance (Ciss) is 1920pF at 10V. This component is suitable for applications in automotive and industrial power management. The device is supplied in tape and reel packaging.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1920 pF @ 10 V |
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