TK40P03M1(T6RSS-Q)
MOSFET N-CH 30V 40A DPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK40P03M1-T6RSS-Q- is a 30V N-channel MOSFET from the U-MOSVI-H series. This device features a low on-resistance of 10.8mOhm at 20A and 10V, with continuous drain current capability of 40A (Ta). The gate charge is specified at 17.5 nC maximum at 10V, and input capacitance (Ciss) is 1150 pF maximum at 10V. Drive voltages range from 4.5V to 10V. The TK40P03M1-T6RSS-Q- is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 10 V |
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