TK40P03M1(T6RDS-Q)
MOSFET N-CH 30V 40A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK40P03M1-T6RDS-Q-, an N-Channel MOSFET from the U-MOSVI-H series. This component features a 30V drain-source voltage rating and a continuous drain current capability of 40A at 25°C. The device offers a low on-resistance of 10.8mOhm maximum at 20A and 10V gate-source voltage. With a gate charge of 17.5 nC maximum at 10V and input capacitance of 1150 pF maximum at 10V, it is suitable for high-efficiency switching applications. The TK40P03M1-T6RDS-Q- utilizes surface mount technology, supplied in a DPAK (TO-252-3) package on tape and reel. This power MOSFET is designed for use in automotive and industrial power management systems.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 10 V |