TK40E10K3,S1X(S
MOSFET N-CH 100V 40A TO220-3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK40E10K3-S1X-S is an N-Channel MOSFET from the U-MOSIV series, housed in a TO-220-3 package. This through-hole component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 40A at 25°C. Its on-resistance (Rds On) is a maximum of 15mOhm at 20A and 10V, with a gate charge (Qg) of 84nC at 10V. Input capacitance (Ciss) is rated at a maximum of 4000pF at 10V. This device is suitable for applications in power management, industrial automation, and consumer electronics.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |