TK3A65D(STA4,Q,M)
MOSFET N-CH 650V 3A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage, a leading innovator in power electronics, presents the TK3A65D-STA4-Q-M-, a high-performance N-channel MOSFET from their À-MOSVII series. This through-hole component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 35W (Tc). The TK3A65D-STA4-Q-M- exhibits a low on-resistance (Rds On) of 2.25 Ohms maximum at 1.5A, 10V, and a gate charge (Qg) of 11 nC maximum at 10V. Its input capacitance (Ciss) is rated at 540 pF maximum at 25V. Engineered for demanding applications, this MOSFET is suitable for power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose power switching in industries such as consumer electronics, industrial automation, and telecommunications. The TO-220SIS package ensures robust thermal management.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
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