TK35S04K3L(T6L1,NQ
MOSFET N-CH 40V 35A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK35S04K3L-T6L1-NQ is an N-Channel MOSFET from the U-MOSIV series. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C ambient temperature. With a low on-resistance (Rds On) of 10.3mOhm at 17.5A and 10V gate-source voltage, it offers efficient power switching. The device is rated for a maximum power dissipation of 58W (Tc) and operates up to a junction temperature of 175°C. Key parameters include a gate charge (Qg) of 28nC at 10V and input capacitance (Ciss) of 1370pF at 10V. The TK35S04K3L-T6L1-NQ is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivered on tape and reel. This MOSFET is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: U-MOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.3mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 10 V |
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