TK35E08N1,S1X
MOSFET N-CH 80V 55A TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TK35E08N1-S1X, belongs to the U-MOSVIII-H series. This component features a drain-to-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 55 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 12.2 mOhm at 17.5 A and 10 V drive voltage. With a gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 1700 pF at 40 V, it is suitable for high-efficiency power conversion applications. The maximum power dissipation is 72 W (Tc), and it operates within a junction temperature range of 150°C. The TK35E08N1-S1X is housed in a TO-220-3 package, designed for through-hole mounting. This MOSFET is utilized in industrial and automotive power management systems requiring robust switching performance.
Additional Information
Series: U-MOSVIII-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.2mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 300µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 40 V |
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