TK33S10N1L,LQ
MOSFET N-CH 100V 33A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK33S10N1L-LQ, an N-Channel MOSFET from the U-MOSVIII-H series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 33A at 25°C. The device boasts a low on-resistance of 9.7mOhm at 16.5A and 10V, with a gate charge (Qg) of 33 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2250 pF at 10V. Designed for surface mounting, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. The maximum power dissipation is 125W (Tc), and it operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: U-MOSVIII-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 74 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 10 V |
Request a Quote
Clients Also Buy
TPN1600ANH,L1Q
MOSFET N CH 100V 17A 8TSON-ADV
TP86R203NL,LQ
MOSFET N CH 30V 19A 8SOP
TPH6R30ANL,L1Q
MOSFET N-CH 100V 66A/45A 8SOP
