TK31V60X,LQ
MOSFET N-CH 600V 30.8A 4DFNManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 600 V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
Additional Information
Series: DTMOSIV-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.5mA |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
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