TK30S06K3L(T6L1,NQ
MOSFET N-CH 60V 30A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSIV series TK30S06K3L-T6L1-NQ is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This AEC-Q101 qualified component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The device boasts a low on-resistance of 18 Ohms maximum at 15A and 10V Vgs, with a maximum gate charge (Qg) of 28 nC at 10V. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V maximum at 1mA. The TK30S06K3L-T6L1-NQ is housed in a TO-252-3, DPAK+ surface-mount package, allowing for a maximum power dissipation of 58W (Tc) and an operating junction temperature of 175°C. This component is suitable for automotive and industrial power management systems.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 18Ohm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |
| Qualification | AEC-Q101 |