TK2Q60D(Q)
MOSFET N-CH 600V 2A PW-MOLD2Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage offers the TK2Q60D-Q-, an N-Channel MOSFET from the À-MOSVII series. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2 A at 25°C (Ta). The device exhibits a maximum on-resistance (Rds On) of 4.3 Ohms at 1 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 7 nC (max) at 10 V and an input capacitance (Ciss) of 280 pF (max) at 25 V. With a maximum power dissipation of 60 W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for applications requiring robust power switching. It is supplied in a through-hole mounting PW-MOLD2 package (TO-251-3 Stub Leads, IPAK). This component finds utility in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | PW-MOLD2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
Request a Quote
Clients Also Buy
TK6P53D(T6RSS-Q)
MOSFET N-CH 525V 6A DPAK
TK7P50D(T6RSS-Q)
MOSFET N-CH 500V 7A DPAK
TK13A50D(STA4,Q,M)
MOSFET N-CH 500V 13A TO220SIS
