TK2P60D(TE16L1,NQ)
MOSFET N-CH 600V 2A PW-MOLDManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TK2P60D-TE16L1-NQ- is an N-Channel MOSFET from the À-MOSVII series. This surface mount device offers a Drain to Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 2A at 25°C (Ta). The Rds On is specified at a maximum of 4.3 Ohms at 1A, 10V. Key characteristics include a maximum gate charge (Qg) of 7 nC at 10 V and an input capacitance (Ciss) of 280 pF at 25 V, 25 V. The device supports a gate-source voltage (Vgs) range of ±30 V, with a threshold voltage (Vgs(th)) of 4.4V at 1mA. With a maximum power dissipation of 60W (Tc) and an operating junction temperature of 150°C, this component is suitable for applications in power supply units, lighting, and industrial motor control. The component is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as PW-MOLD, on tape and reel.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | PW-MOLD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |