TK2A65D(STA4,Q,M)
MOSFET N-CH 650V 2A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK2A65D-STA4-Q-M- is a 650V N-Channel MOSFET from the À-MOSVII series. This component features a continuous drain current of 2A (Ta) and a maximum power dissipation of 30W (Tc). With an Rds On of 3.26 Ohms at 1A, 10V and a gate charge of 9 nC at 10V, it is suitable for applications requiring efficient switching. The TO-220SIS package with through-hole mounting is provided in tube packaging. This MOSFET is utilized in power supply and industrial applications.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.26Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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