TK25N60X,S1F
MOSFET N-CH 600V 25A TO247Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV-H series TK25N60X-S1F is an N-channel power MOSFET with a drain-source voltage (Vdss) of 600 V. This through-hole component features a continuous drain current (Id) of 25A at 25°C and a maximum power dissipation of 180W. The Rds On is specified at a maximum of 125mOhm at 7.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 2400 pF at 300V. The device operates at junction temperatures up to 150°C and is housed in a TO-247-3 package. This component is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: DTMOSIV-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 300 V |
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