TK25E60X5,S1X
MOSFET N-CH 600V 25A TO220Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV-H series N-Channel Power MOSFET, part number TK25E60X5-S1X. This through-hole TO-220 device offers a 600V drain-source voltage and a continuous drain current of 25A at 25°C ambient. Featuring a low on-resistance of 140mOhm maximum at 7.5A and 10V gate drive, this MOSFET is designed for efficient power switching applications. Key parameters include a gate charge of 60nC maximum at 10V and an input capacitance of 2400pF maximum at 300V. The component supports a maximum junction temperature of 150°C and a power dissipation of 180W at the case. Applications include power supplies, industrial motor control, and lighting systems.
Additional Information
Series: DTMOSIV-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.2mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 300 V |
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