TK25A60X,S5X
MOSFET N-CH 600V 25A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV-H series N-channel Power MOSFET, part number TK25A60X-S5X. This device features a 600 V breakdown voltage and a continuous drain current of 25 A at 25°C ambient. With a low on-resistance of 125 mO maximum at 7.5 A and 10 V Vgs, it is designed for efficient power switching. Key parameters include input capacitance (Ciss) of 2400 pF at 300 V and gate charge (Qg) of 40 nC at 10 V. The device operates at a maximum junction temperature of 150°C and offers a power dissipation of 45 W at the case. Packaged in a TO-220SIS (TO-220-3 Full Pack) for through-hole mounting, this MOSFET is suitable for applications in power supplies, industrial motor control, and lighting. The maximum gate-source voltage is ±30 V.
Additional Information
Series: DTMOSIV-HRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 300 V |
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