TK20V60W,LVQ
MOSFET N-CH 600V 20A 4DFNManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSIV series TK20V60W-LVQ is a high-voltage N-Channel Power MOSFET. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 170mOhm at 10A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 48 nC (max) at 10V and input capacitance (Ciss) of 1680 pF (max) at 300V, it is suitable for demanding applications. The TK20V60W-LVQ is packaged in a 4-DFN-EP (8x8) surface mount configuration and supports a maximum junction temperature of 150°C. This MOSFET is utilized in power supplies, industrial automation, and lighting control systems.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 1mA |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 300 V |
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