TK20S06K3L(T6L1,NQ
MOSFET N-CH 60V 20A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number TK20S06K3L-T6L1-NQ, from the U-MOSIV series. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C ambient. The surface mount DPAK+ package (TO-252-3) offers a maximum power dissipation of 38W at the case temperature. Key electrical parameters include a maximum on-resistance (Rds On) of 29mOhm at 10A and 10V Vgs, and a typical gate charge of 18nC at 10V. Input capacitance (Ciss) is 780pF maximum at 10V Vds. The operating junction temperature range extends to 175°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |