TK20S04K3L(T6L1,NQ
MOSFET N-CH 40V 20A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage U-MOSIV series N-Channel power MOSFET, part number TK20S04K3L-T6L1-NQ. This device features a 40V drain-source breakdown voltage and a continuous drain current rating of 20A at 25°C ambient. The TK20S04K3L-T6L1-NQ offers a low on-resistance of 14mOhm maximum at 10A, 10V drain-source voltage, and gate-source voltage. With a maximum junction temperature of 175°C and a power dissipation of 38W at case temperature, it is suitable for demanding applications. The device is housed in a TO-252-3, DPAK+ (SC-63) surface mount package and supplied on tape and reel. Typical applications include power management, automotive systems, and industrial equipment.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 10 V |