TK20P04M1,RQ(S
MOSFET N-CH 40V 20A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK20P04M1-RQ-S is an N-Channel MOSFET from the U-MOSVI-H series. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 20A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 29mOhm at 10A and 10V. Its surface mount DPAK package (TO-252-3, DPAK) supports a maximum power dissipation of 27W (Tc). Key electrical parameters include a gate charge (Qg) of 15 nC maximum at 10V and an input capacitance (Ciss) of 985 pF maximum at 10V. The operating temperature range extends to 150°C (TJ). This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: U-MOSVI-HRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 985 pF @ 10 V |