TK20J60U(F)
MOSFET N-CH 600V 20A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK20J60U-F- is a DTMOSII series N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 190mOhm maximum at 10A and 10V, with a gate charge (Qg) of 27nC maximum at 10V. Its input capacitance (Ciss) is 1470pF maximum at 10V. With a maximum power dissipation of 190W (Tc), this MOSFET is suitable for power supply units, lighting, and motor drives. The TO-3P(N) package ensures robust thermal performance up to a junction temperature of 150°C.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 10 V |
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