TK20C60W,S1VQ
MOSFET N-CH 600V 20A I2PAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSIV series N-Channel Power MOSFET, part number TK20C60W-S1VQ. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Ta). The TK20C60W-S1VQ offers a maximum on-resistance (Rds On) of 155mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 48nC at 10V and input capacitance (Ciss) of 1680pF at 300V. With a maximum power dissipation of 165W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for high-voltage switching applications. It is housed in an I2PAK package for through-hole mounting. This component finds application in power supply units and industrial motor control.
Additional Information
Series: DTMOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 300 V |
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