TK20A60U(Q,M)
MOSFET N-CH 600V 20A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK20A60U-Q-M-, an N-Channel MOSFET from the DTMOSII series. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 20 A at 25°C (Ta). The device offers a maximum Rds On of 190 mOhm at 10A, 10V, with a gate drive voltage of 10V. Key parameters include an input capacitance (Ciss) of 1470 pF at 10V and a gate charge (Qg) of 27 nC at 10V. With a maximum power dissipation of 45W (Tc), this MOSFET operates at an ambient temperature up to 150°C (TJ). The TK20A60U-Q-M- is housed in a TO-220SIS package, suitable for through-hole mounting. This component is utilized in power supply, industrial, and automotive applications.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 10 V |
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