TK20A25D,S5Q(M
MOSFET N-CH 250V 20A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK20A25D-S5Q-M is an N-Channel MOSFET from the À-MOSVII series. This through-hole component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 20A at 25°C. The device offers a maximum on-resistance (Rds On) of 100mOhm at 10A and 10V. Key electrical characteristics include a gate charge (Qg) of 55 nC (max) at 10V and input capacitance (Ciss) of 2550 pF (max) at 100V. With a maximum power dissipation of 45W (Tc) and an operating temperature up to 150°C (TJ), this MOSFET is suitable for applications in power supply, industrial automation, and automotive sectors. The component is supplied in a TO-220SIS package.
Additional Information
Series: À-MOSVIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 100 V |
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