TK190E65Z,S1X
650V DTMOS VI TO-220 190MOHMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the TK190E65Z-S1X, an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650 V and offers a low on-resistance (Rds On) of 190 mOhm at 7.5 A and 10 V gate drive. With a continuous drain current (Id) of 15 A (Ta) and a maximum power dissipation of 130 W (Tc), it supports demanding thermal management. The TO-220-3 package, mounted via a through-hole configuration, facilitates robust integration into power supply units, motor drives, and industrial automation systems. Key parameters include a gate charge (Qg) of 25 nC @ 10 V and input capacitance (Ciss) of 1370 pF @ 300 V. The operating temperature range extends to 150°C, ensuring reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 610µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 300 V |
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