TK18E10K3,S1X(S
MOSFET N-CH 100V 18A TO220-3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's TK18E10K3-S1X-S is an N-Channel MOSFET featuring a 100V drain-source voltage and a continuous drain current of 18A at 25°C. This U-MOSIV series component is housed in a standard TO-220-3 package, designed for through-hole mounting. The device exhibits a low on-resistance of 42mOhm at 9A and 10V, with a typical gate charge of 33 nC at 10V. Engineered for demanding applications, this MOSFET operates at junction temperatures up to 150°C. It is commonly utilized in power management circuits across various industrial and consumer electronics sectors requiring efficient switching and high current handling capabilities.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |