TK18A50D(STA4,Q,M)
MOSFET N-CH 500V 18A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK18A50D-STA4-Q-M- is an N-Channel MOSFET from the À-MOSVII series. This through-hole component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 18 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 270 mOhm at 9 A and 10 V gate-source voltage. With a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 2600 pF at 25 V, it is suitable for applications requiring efficient switching. The maximum power dissipation is 50 W (Tc). This MOSFET is packaged in a TO-220SIS form factor and operates at temperatures up to 150°C. It finds utility in power supply units and industrial automation systems.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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