TK15J60U(F)
MOSFET N-CH 600V 15A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK15J60U-F- is an N-Channel DTMOSII series power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 600V and can handle a continuous drain current (Id) of 15A at 25°C. The device offers a low on-resistance (Rds On) of 300mOhm maximum at 7.5A and 10V gate-source voltage. With a maximum power dissipation of 170W (Tc), it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 17 nC maximum at 10V Vgs and input capacitance (Ciss) of 950 pF maximum at 10V Vds. The TK15J60U-F- utilizes a TO-3P(N) through-hole package, ensuring robust thermal management and ease of assembly. This MOSFET is a robust choice for industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 10 V |
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