TK15A60U(STA4,Q,M)
MOSFET N-CH 600V 15A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK15A60U-STA4-Q-M is an N-channel DTMOSII series power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 15A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 300mOhm maximum at 7.5A and 10V. With a maximum power dissipation of 40W (Tc), it is suitable for demanding power conversion and control circuits. The TO-220SIS package with a through-hole mounting type ensures robust thermal management. Key electrical characteristics include a gate charge (Qg) of 17nC maximum and input capacitance (Ciss) of 950pF maximum, both specified at 10V. This MOSFET is utilized in industries such as industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 10 V |
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