TK15A60D(STA4,Q,M)
MOSFET N-CH 600V 15A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK15A60D-STA4-Q-M- is a 600 V N-Channel MOSFET from the À-MOSVII series. This component features a continuous drain current of 15A at 25°C (Ta) and a maximum power dissipation of 50W (Tc). The Rds On is specified at 370mOhm maximum at 7.5A, 10V. Key electrical parameters include a gate charge (Qg) of 45 nC maximum at 10V and input capacitance (Ciss) of 2600 pF maximum at 25V. The device operates at temperatures up to 150°C (TJ) and is housed in a TO-220SIS package with a through-hole mounting type. This MOSFET is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |