TK14V65W,LQ
PB-F POWER MOSFET TRANSISTOR DTMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number TK14V65W-LQ, from the DTMOSIV series. This surface mount device features a 650V drain-source voltage and a continuous drain current of 13.7A at 25°C. With a maximum power dissipation of 139W (Tc) and a low on-resistance of 280mOhm (max) at 6.9A and 10V Vgs, this MOSFET is engineered for high-efficiency power conversion. The 4-DFN-EP (8x8) package with an exposed pad facilitates thermal management. Key parameters include a gate charge of 35 nC (max) at 10V and input capacitance of 1300 pF (max) at 300V. This component is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 690µA |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
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